Thermoelectric properties of single crystalline B4C prepared by a floatingzone method

Citation
I. Gunjishima et al., Thermoelectric properties of single crystalline B4C prepared by a floatingzone method, MATER TRANS, 42(7), 2001, pp. 1445-1450
Citations number
32
Categorie Soggetti
Material Science & Engineering
Journal title
MATERIALS TRANSACTIONS
ISSN journal
13459678 → ACNP
Volume
42
Issue
7
Year of publication
2001
Pages
1445 - 1450
Database
ISI
SICI code
1345-9678(200107)42:7<1445:TPOSCB>2.0.ZU;2-Q
Abstract
High-purity single crystalline B4C, several cm in size, has been prepared b y a Floating Zone method. The electrical conductivity, Hall mobility, Seebe ck coefficient and thermal conductivity are measured from room temperature to 1023 K. The electrical conductivity is about four times higher than that of sintered B4C. The mobility has increased with increasing temperature, i ndicating hopping conduction of charge carriers. The Seebeck coefficient is 240-260 mu VK-1, almost independent of temperature. The thermal conductivi ty is about twice higher than that of sintered B4C. The thermoelectric figu re-of-merit is also higher than that of sintered B4C, being 4.2 x 10(-5) K- 1 at 1100 K.