ANALYSIS OF THE EFFECT OF AN ELECTRIC-FIELD PROFILE ON THE GAIN-BANDWIDTH PRODUCT OF AVALANCHE PHOTODETECTORS

Authors
WU WS HAWKINS AR BOWERS JE
Citation
Ws. Wu et al., ANALYSIS OF THE EFFECT OF AN ELECTRIC-FIELD PROFILE ON THE GAIN-BANDWIDTH PRODUCT OF AVALANCHE PHOTODETECTORS, Optics letters, 22(15), 1997, pp. 1183-1185
Citations number
10
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
22
Issue
15
Year of publication
1997
Pages
1183 - 1185
Database
ISI
SICI code
0146-9592(1997)22:15<1183:AOTEOA>2.0.ZU;2-R
Abstract
We investigate the effect of the electric-field profile on the gain-ba ndwidth product of avalanche photodetectors with separate absorption a nd multiplication. We show that for a given multiplication layer thick ness the electric-field profile plays an important role in determining the gain-bandwidth product. The calculation results show that an incr easing triangular electric-field profile yields a larger gain-bandwidt h product than most other profiles for Si/InGaAs avalanche photodetect ors. (C) 1997 Optical Society of America.