Plasma charging damage mechanisms and impact on new technologies

Authors
Reimbold, G Poiroux, T
Citation
G. Reimbold et T. Poiroux, Plasma charging damage mechanisms and impact on new technologies, MICROEL REL, 41(7), 2001, pp. 959-965
Citations number
34
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
7
Year of publication
2001
Pages
959 - 965
Database
ISI
SICI code
0026-2714(200107)41:7<959:PCDMAI>2.0.ZU;2-1
Abstract
Plasma charging damage is a serious concern in fab today. In this topic wil l be discussed mechanisms through which charging damage arises, how to char acterize them, and how to minimize them at the different phases of circuit fabrication. The relation between oxide thickness and damage will be discus sed highlighting the importance of characterization methods and reliability physics. Importance of charging damage on new technologies as copper and S OI will be discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.