Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

This paper deals with the development of the disilane Si2H6 gaseous source for gate technology and more precisely, reports on the use of nitrogen dope d silicon (NIDOS) deposited from disilane and ammonia for the realisation o f polycrystalline gate. Boron diffusivity into the NIDOS films is studied t hanks to SIMS experiments, and results are extended to the fabrication of P +-poly-Si/NIDOS/SiO2/Si capacitive structures. Electrical characterisations evidenced finally the influence of boron and nitrogen atoms on the electri cal properties of PMOS devices. (C) 2001 Elsevier Science Ltd. All rights r eserved.