The effect of through the gate implantation (TGI) on MOS devices with oxide
thicknesses of 3.3, 4.0, and 20 nit is studied, utilizing constant voltage
stress tests and a substrate hot electron (SHE) injection technique. For 3
.3 and 4.0 nm thick oxides, a dependence of time to breakdown on TGI dose i
s detected which, for 3.3 nm samples, diminishes with increasing test volta
ge. SHE injection measurements show a TGI induced increase in intrinsic ele
ctron trap density and also an increase in trap generation rate during samp
le stressing. A change of electron trap generation dynamics seems to be the
main cause for oxide weakening due to TGI. (C) 2001 Elsevier Science Ltd.
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