Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)

Authors
Clerc, R Spinelli, AS Ghibaudo, G Leroux, C Pananakakis, G
Citation
R. Clerc et al., Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm), MICROEL REL, 41(7), 2001, pp. 1027-1030
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
7
Year of publication
2001
Pages
1027 - 1030
Database
ISI
SICI code
0026-2714(200107)41:7<1027:ECAQMO>2.0.ZU;2-L
Abstract
Electrical characterization of MOS capacitors with ultra-thin oxides (1.4-3 nm) has been carried out. The validity of the correction to C-V data, need ed to take into account the series resistance and leakage current, is discu ssed. The gate current in accumulation and in depletion regions has been in vestigated and properly modeled based on detailed analysis of tunneling fro m the polygate. (C) 2001 Elsevier Science Ltd. All rights reserved.