Threshold energies in the light emission characteristics of silicon MOS tunnel diodes

Authors
Asli, N Vexler, MI Shulekin, AF Yoder, PD Grekhov, IV Seegebrecht, P
Citation
N. Asli et al., Threshold energies in the light emission characteristics of silicon MOS tunnel diodes, MICROEL REL, 41(7), 2001, pp. 1071-1076
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
7
Year of publication
2001
Pages
1071 - 1076
Database
ISI
SICI code
0026-2714(200107)41:7<1071:TEITLE>2.0.ZU;2-5
Abstract
Hot electron luminescence of MOS tunnel structures with sub-3 nm oxide laye r on p-Si is experimentally studied. Radiation spectra are shown to exhibit thresholds whose positions depend on the initial energy E of injected elec trons. Simultaneously, a threshold-like increase of the light intensity at a selected wavelength as a function of E is revealed, and attributed to the onset of different luminescence mechanisms. (C) 2001 Elsevier Science Ltd. All rights reserved.