Impact of substituting SiO2ILD by low k materials into AlCu RIE metallization

Authors
Weber, D Hohnsdorf, F Hausmann, A Klipp, A Stavreva, Z Herrmann, J Bauch, L Junack, M Neef, H Nichterwitz, M Finsterbusch, S Liebmann, R Kallis, N Kieslich, A
Citation
D. Weber et al., Impact of substituting SiO2ILD by low k materials into AlCu RIE metallization, MICROEL REL, 41(7), 2001, pp. 1081-1083
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
7
Year of publication
2001
Pages
1081 - 1083
Database
ISI
SICI code
0026-2714(200107)41:7<1081:IOSSBL>2.0.ZU;2-2
Abstract
The impact of introducing a low k dielectric for gap fill into standard pro cess flow of AlCu RIE metallization with SiO2 ILD is described. The low k m aterial is a carbon-doped silicon oxide deposited by CVD. Standard oxide tr eatment is used for further processing of the material, i.e. CMP, contact e tch, resist strip and contact clean. The CMP polish rate and the via hole p rofiles are investigated. The capacitive coupling is reduced by 15% compare d to a standard HDP oxide gap fill. (C) 2001 Elsevier Science Ltd. All righ ts reserved.