Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices

PMOS devices with and without nitrogen implant into the gate electrode befo re doping with boron and with nitridation of the gate oxide were manufactur ed. The influence of nitrogen on the penetration of boron ions into the sub strate through ultra-thin gate oxides was investigated by electrical and SI MS measurements. Boron diffusion can be effectively prevented by high nitro gen concentrations located immediately above the gate oxide and within the polysilicon gate electrode. (C) 2001 Elsevier Science Ltd. All rights reser ved.