S. Strobel et al., Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices, MICROEL REL, 41(7), 2001, pp. 1085-1088
PMOS devices with and without nitrogen implant into the gate electrode befo
re doping with boron and with nitridation of the gate oxide were manufactur
ed. The influence of nitrogen on the penetration of boron ions into the sub
strate through ultra-thin gate oxides was investigated by electrical and SI
MS measurements. Boron diffusion can be effectively prevented by high nitro
gen concentrations located immediately above the gate oxide and within the
polysilicon gate electrode. (C) 2001 Elsevier Science Ltd. All rights reser
ved.