DEPOSITION OF NITROGEN-DOPED TETRAHEDRAL AMORPHOUS-CARBON (TA-C-N) FILMS BY ION-BEAM-ASSISTED FILTERED CATHODIC VACUUM-ARC

Authors
CHEAH LK XU S TAY BK
Citation
Lk. Cheah et al., DEPOSITION OF NITROGEN-DOPED TETRAHEDRAL AMORPHOUS-CARBON (TA-C-N) FILMS BY ION-BEAM-ASSISTED FILTERED CATHODIC VACUUM-ARC, Electronics Letters, 33(15), 1997, pp. 1339-1340
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
15
Year of publication
1997
Pages
1339 - 1340
Database
ISI
SICI code
0013-5194(1997)33:15<1339:DONTA(>2.0.ZU;2-R
Abstract
An alternative approach to deposit ta-C:N films by ion assisted filter ed cathodic vacuum are (IAFCVA) is presented and compared with ta-C fi lms prepared by FCVA under nitrogen partial pressure. The electronic p roperties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.