RELIABILITY EXTRAPOLATION MODEL FOR STRESS-INDUCED-LEAKAGE CURRENT INTHIN SILICON-OXIDES

A novel reliability extrapolation model is proposed for the stress-ind uced-leakage current (SILC) in very thin oxides. This model relies on the assessment of power laws for the SILC degradation kinetics as a fu nction of both injection dose and stress current density. The SILC deg radation rate is found to be almost independent of stress and measurin g bias polarity. The simple analytical expressions found for the degra dation kinetics enable the SILC intensity to be predicted at nominal o perating conditions for both constant current and constant voltage str ess.