We have succeeded in observing resonant coherent excitaion (RCE) of Is elec
trons to the n = 3 states in 390 MeV/u hydrogen-like Ar17+ ions planar chan
neled in a silicon crystal through measurements of the charge-state distrib
ution of ions transmitting the crystal. Furthermore, we directly confirmed
RCE to the n = 3 states by observing the enhancement of the de-excitation X
-rays, i.e., K-beta X-rays under the resonance condition. The resonance pro
files of the charge-state distribution as functions of the incident angle t
o the crystal, which uniquely relates with the transition energy, have a ch
aracteristic structure consisting of several peaks. Compared with the profi
le of RCE to the n = 2 states, the present profiles show a large peak shift
from the j = 1/2 and 3/2 levels in vacuum, and the profiles are much wider
than those expected from the Stark-split. level structure of the n = 3 man
ifolds due to the position(distance from the channel center in the planar c
hannel) dependent strong static field in the crystal.