Determination of the in-plane effective mass and quantum lifetime of 2D electrons in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from the quantum oscillations in Hall resistance

Hall effect measurements as a function of magnetic field up to 2.3 T perfor med in the temperature range between 3.3 and 12 K, have been used to invest igate the electronic transport properties of modulation-doped In0.53Ga0.47A s/In0.52Al0.48As heterojunctions with single- or double-subband occupancy. The carrier density (N-i) in each subband, the Fermi energy (E-F - E-i) wit h respect to subband energy and subband separation (E-2 - E-1) have been de termined from the periods of the quantum oscillations in Hall resistance. T he in-plane effective mass (m*) and the quantum lifetime (tau (q)) of 2D el ectrons in each subband have been obtained from the temperature and magneti c field dependences of the amplitude of the Hall oscillations, respectively . The results found for N-i, E-F - E-i, E-2 - E-1, m* and tau (q) are in go od agreement with those determined from Shubnikov-de Haas effect in magneto resistance. It is shown that the experimental technique employed in the cur rent study is equally successful in determining the effective scattering me chanisms in highly-degenerate 2D structures at low temperatures. The result s obtained for transport-to-quantum lifetime ratio suggest that the scatter ing of electrons in the first subband of modulation-doped In0.53Ga0.47As/In 0.52Al0.48As heterojunctions is, on average, forward displaced in momentum space, while the scattering of electrons in the second subband contains som e contribution from large-angle scattering.