Electronic energy loss Of H-3(+) ion clusters in SiO2 films - art. no. 022904

In this paper, we present results on the energy loss of H-3 molecules in Si O2 films with thickness ranging from 2.5 to 50 nm. For this purpose, we hav e used the resonant O-18(p, alpha) N-15 nuclear reaction at 151.2 keV with atomic and molecular H-3 beams. This reaction is particularly suitable in t he present study, since the width of the resonance peak is only 50 eV. The experimental results show the maximum values of interference effects so far observed: R approximate to 1.8-2.1 for the lowest thickness range of 2.5-7 .0 rim. Calculations based on the dielectric formalism are in good agreemen t with the experimental data.