J. Chen et al., COMPARISON OF TISI2, COSI2, AND NISI FOR THIN-FILM SILICON-ON-INSULATOR APPLICATIONS, Journal of the Electrochemical Society, 144(7), 1997, pp. 2437-2442
TiSi2, CoSi2, and NiSi self-aligned silicide processes have been studi
ed, compared, and applied to thin-film silicon-on-insulator technology
. Compared to TiSi2, CoSi2 and NiSi have the advantages of wider proce
ss temperature window, no significant doping retarded reaction, narrow
runner degradation, and thin-film degradation. Therefore, they are mo
re suitable for thin-film silicon-on-insulator technology. N-type fiel
d effect transistors have been fabricated in a complementary metal oxi
de-semiconductor compatible thin-film silicon-on-insulator technology
with titanium, cobalt, and nickel self-aligned silicide processes for
low-voltage, low-power microwave applications. The initial thicknesses
of titanium, cobalt, and nickel are 30, 13, and 25 nm, respectively.
The gate sheet resistances are 6.2, 4.4, and 2.9 Omega/square, respect
ively, and the total source/drain series resistances are 700, 290, and
550 Omega mu m, respectively. High-frequency measurement results are
also presented.