Two-carrier transport in epitaxially grown MnAs - art. no. 052408

Citation
Jj. Berry et al., Two-carrier transport in epitaxially grown MnAs - art. no. 052408, PHYS REV B, 6405(5), 2001, pp. 2408
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6405
Issue
5
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010801)6405:5<2408:TTIEGM>2.0.ZU;2-H
Abstract
Magnetotransport measurements of ferromagnetic MnAs epilayers grown by mole cular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes and at low temperatures by electrons. We also observe distinct changes in t he magnetoresistance associated with the transition between the electron- a nd hole-dominated transport regimes. These results are of direct relevance to MnAs/semiconductor hybrid heterostructures and their exploitation in ele ctronic and optical spin injection experiments.