Magnetotransport measurements of ferromagnetic MnAs epilayers grown by mole
cular beam epitaxy reveal the presence of both positive and negative charge
carriers. Electrical transport at high temperatures is dominated by holes
and at low temperatures by electrons. We also observe distinct changes in t
he magnetoresistance associated with the transition between the electron- a
nd hole-dominated transport regimes. These results are of direct relevance
to MnAs/semiconductor hybrid heterostructures and their exploitation in ele
ctronic and optical spin injection experiments.