An analytic model for the thin-film field-emission triode has been develope
d which allows fast and accurate calculation of the electric field distribu
tion on the surface of the thin-film cathode for a wide range of device dim
ensions and operating voltages. The model can also be used to calculate the
potential distribution throughout the device. The model is used together w
ith the Fowler-Nordheim equation and with the published field-emission data
on a carbon nanotube film to calculate the profiles of emission current al
ong the surface of the thin-film cathode for a number of geometries. Non-un
iform emission is shown to be a problem, which will result in undesirably l
arge gate currents. Increasing the anode voltage to bias the cathode to jus
t below its emission threshold even when the gate is off is shown to be an
effective means of providing uniform emission when the gate is turned on wh
ile preserving a sufficiently high on/off ratio of emitted current. (C) 200
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