Band gap structure and electron emission property of chemical-vapor-deposited diamond films

Authors
Liu, JJ Chiu, DYT Morton, DC Kang, DH Zhirnov, VV Hren, JJ Cuomo, JJ
Citation
Jj. Liu et al., Band gap structure and electron emission property of chemical-vapor-deposited diamond films, SOL ST ELEC, 45(6), 2001, pp. 915-919
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
6
Year of publication
2001
Pages
915 - 919
Database
ISI
SICI code
0038-1101(200106)45:6<915:BGSAEE>2.0.ZU;2-J
Abstract
The structures of the band gap and defect states of chemical-vapor-deposite d diamond films were investigated by photoluminescence spectroscopy, coveri ng wavelength from visible to vacuum ultraviolet (VUV). Band gaps ranging f rom 5.5 to 3.2 eV were measured for natural, polycrystalline, and amorphous diamond films. Low voltage field emissions were obtained from wide band ga p films with band gap states distributed close to the conduction band and e xtended deeply into the band gap. Amorphous diamond film with a narrower ba nd gap could not provide low field emission. (C) 2001 Elsevier Science Ltd. All rights reserved.