Field emission from diamond coated tungsten tips

Citation
Vn. Tondare et al., Field emission from diamond coated tungsten tips, SOL ST ELEC, 45(6), 2001, pp. 957-962
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
6
Year of publication
2001
Pages
957 - 962
Database
ISI
SICI code
0038-1101(200106)45:6<957:FEFDCT>2.0.ZU;2-5
Abstract
Field emission (FE) properties of diamond coated tungsten tips have been st udied using a glass FE microscope. Diamond film was deposited on a tungsten field emitter by hot filament chemical vapour deposition method. Stable em ission was found to occur from discrete locations as seen from the FE patte rns. FE current-voltage (I-V) characteristics at 300 and 78 K have been stu died. The difference in I-V characteristics at 300 and 78 K has been attrib uted to the reduction in conductivity at 78 K. The emission current is foun d remarkably stable over a long period of more than 3 h. Spectral analysis of the FE current shows noise proportional to 1/f(0.35), f being the freque ncy. The overall behaviour of the diamond coated tungsten emitter is consis tent with the subband model of electron emission from semiconducting diamon d. (C) 2001 Elsevier Science Ltd. All rights reserved.