Performance of nanocrystalline graphite field emitters

Citation
Hh. Busta et al., Performance of nanocrystalline graphite field emitters, SOL ST ELEC, 45(6), 2001, pp. 1039-1047
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
6
Year of publication
2001
Pages
1039 - 1047
Database
ISI
SICI code
0038-1101(200106)45:6<1039:PONGFE>2.0.ZU;2-2
Abstract
Nanocrystalline graphite field emitters fabricated on silicon substrates ha ve been characterized in terms of current voltage, pressure dependency, lon g term stability, work function and lateral momentum. The work function is 4.0-4.2 eV and the cone angle of emission due to the lateral momentum of th e emitting electrons in less than 1 degrees. It is shown that with proper p re-testing treatment and copper anodes, these emitters can operate for over 5000 h without significant changes in emission current. They also operate at pressures of 5 x 10(-5) Torr with current fluctuations DeltaI/I of less than 1%. A quite complex emission pattern develops in conjunction with CRT phosphors. The transmission coefficient of electrons exiting a grid can var y from 1-50% depending on which phosphor is being used. (C) 2001 Elsevier S cience Ltd. All rights reserved.