Investigation of Al-a-Si1-xCx interface

Low pressure chemical vapour deposited amorphous silicon carbide films were prepared using a liquid single precursor like hexamethyldisilane. Aluminiu m/silicon carbide interfaces were analysed before and after various treatme nts, such as annealing at 400-550 degreesC or non-conventional treatment in a pyramidal box. Interface chemistry of untreated and treated aluminium la yers on silicon carbide films in correlation with electrical properties was established. Analytical methods as secondary ion mass spectrometry and X-r ay photoelectron spectroscopy revealed very reactive interfaces on investig ated structures, the transition phase being dependent on the film compositi on and structure. The interface mechanism changes with both carbide film pr operties and treatment conditions. (C) 2001 Elsevier Science B.V. All right s reserved.