Cm. Teodorescu et al., X-ray magnetic circular dichroism, photoemission and RHEED studies of Fe/InAS(100) interfaces, SURF SCI, 482, 2001, pp. 1004-1009
In contrast with the other interfaces involving deposition of 3d transition
metals on III-V semiconductors (mostly GaAs), the Fe/InAs(1 0 0) interface
exhibits magnetic properties even at the lowest coverage (1 monolayer, ML)
investigated. The reactivity of the interface is also lower compared with
Fe/GaAs. It involves formation of an interface compound of approximate stoi
chiometry of FeAs mixed with metallic In islands for Fe coverages lower tha
n 3 ML, followed by the growth of relaxed bulk alpha -Fe in a Vollmer-Weber
mode. (C) 2001 Elsevier Science B.V. All rights reserved.