Magnetic behavior of oxidized iron thin films prepared by sputtering at very low temperatures

Citation
A. Munoz-martin et al., Magnetic behavior of oxidized iron thin films prepared by sputtering at very low temperatures, SURF SCI, 482, 2001, pp. 1095-1100
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
2
Pages
1095 - 1100
Database
ISI
SICI code
0039-6028(20010620)482:<1095:MBOOIT>2.0.ZU;2-8
Abstract
Iron thin films have been grown on Si(1 0 0) wafers by DC magnetron sputter ing at well-controlled substrate temperatures. Film thickness is less than 100 nm and preparation temperature ranges from 100 to 300 K. The magnetic p roperties of these films show two interesting behaviors. By decreasing the preparation substrate temperature, the magnetic coercivity presents a clear enhancement, but below 200 K, coercivity goes to very low values. Addition ally, the magnetic hysteresis loops show an exchange bias, which is attribu ted to the film oxidation, that also depends on the preparation temperature . Exchange bias also increases when the preparation temperature goes from 3 00 to 200 K and suddenly decrease when the preparation is carried out at te mperatures lower than 200 K. Magnetic and structural data can be explained within a qualitative model that takes into account the iron nanometric grai n size forming the thin films. (C) 2001 Elsevier Science B.V. All rights re served.