Breakdown of the simple kinematic approximation models in high-resolution LEED characterization of the initial growth of Si/Si(111)

We have developed a new software for spot profile analysis low energy elect ron diffraction experiments, which allows variation of the beam energy duri ng a measurement. It enables following multiple diffraction peaks simultane ously. We have explored this possibility in highly accurate measurements of out-of-phase and in-phase intensity during initial growth of Si/Si(111). U nder both diffraction conditions intensity oscillations have been observed, clearly demonstrating the breakdown of the usually applied simple kinemati c approximation models. The effective atomic scattering factors related to atomic steps do deviate from those connected to ideal terrace sites. Our no vel findings urge great caution when extracting information on the morpholo gy of the surface either from the temporal behavior of the spot heights dur ing growth or from the energy dependence of the central spike in the spot p rofile. We suggest that dynamic effects, changing upon kinetic roughening o f the surface, may be important. However, additional experiments on simpler surfaces are required to fully nail down this statement. (C) 2001 Elsevier Science B.V. All rights reserved.