Visible and UV pulsed laser processing of the Ti/Si(001) interface studiedby XPS microscopy with synchrotron radiation

Citation
R. Larciprete et al., Visible and UV pulsed laser processing of the Ti/Si(001) interface studiedby XPS microscopy with synchrotron radiation, SURF SCI, 482, 2001, pp. 141-146
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
1
Pages
141 - 146
Database
ISI
SICI code
0039-6028(20010620)482:<141:VAUPLP>2.0.ZU;2-7
Abstract
The composition and spatial distribution of different Ti-si phases formed b y irradiation of a 5 ML Ti film deposited on Si(1 0 0) with visible and UV short laser pulses was studied employing scanning XPS microscopy with later al resolution of 0.12 mum. The lineshape of the Ti 2p and Si 2p spectra and the Ti 2p and Si 2p maps of the laser processed area have revealed that Ti Si is produced in the external region of the laser spots, where the surface temperature does not exceed 500 degreesC, whereas in the central area TiSi , forms. The synthesis of more diluted alloys is consistent with the therma l gradient existing on the Ti/Si(0 0 1) surface during laser irradiation. ( C) 2001 Elsevier Science B.V. All rights reserved.