Photoemission study of Sm/CdTe interface formation

Citation
E. Guziewicz et al., Photoemission study of Sm/CdTe interface formation, SURF SCI, 482, 2001, pp. 512-518
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
1
Pages
512 - 518
Database
ISI
SICI code
0039-6028(20010620)482:<512:PSOSIF>2.0.ZU;2-U
Abstract
Synchrotron radiation photoemission has been used to study the formation of Sm overlayer on the surface of CdTe( 100) crystal. The data were recorded at room temperature for Sm coverage ranging from 0 to 9 ML. The analysis of constant initial state spectra and energy distribution curves taken in the valence band region showed that at very low Sm coverage (0.1 and 0.2 ML) t he trivalent Sm state dominates. For higher coverages the average valence o f the system drops down from the value of 2.7 to 2.2 for 1.8 NIL. The analy ses of Sm4f multiplet peaks binding energy lead to the conclusion that the average valence of Sm in the Sm/CdTe(100) system is heterogeneous (the vale nce has site-dependent but integer value). The photoemission results indica te strong Sm-CdTe interaction and confirm the assumption about the creation of a surface compound with spinel CdSm2Te4 structure. (C) 2001 Elsevier Sc ience B.V. All rights reserved.