Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface

Authors
De Padova, P Quaresima, C Perfetti, P Larciprete, R Brochier, R Richter, C Ilakovac, V Bencok, P Teodorescu, C Aristov, VY Johnson, RL Hricovini, K
Citation
P. De Padova et al., Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface, SURF SCI, 482, 2001, pp. 587-592
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
1
Pages
587 - 592
Database
ISI
SICI code
0039-6028(20010620)482:<587:EALOCI>2.0.ZU;2-7
Abstract
We have investigated clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface by LEED, STM and high-resolution core-level and valence band (VB) spectrosc opies. The In4d and As3d core levels showed the presence of chemically shif ted components. The decomposition of In4d core level exhibited a new surfac e component located close to that of free indium, metal. This indicates tha t the origin of the electron emission at the Fermi level measured in the VB spectra is probably due to the free In charge, STM measurements showed a u niform distribution of charge on the In-rows. which are highly ordered over large areas of the surface. (C) 2001 Elsevier Science B.V. All rights rese rved.