Electronic structure and reactivity of the Co/MoS2(0001) interface

Citation
A. Mascaraque et al., Electronic structure and reactivity of the Co/MoS2(0001) interface, SURF SCI, 482, 2001, pp. 664-668
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
1
Pages
664 - 668
Database
ISI
SICI code
0039-6028(20010620)482:<664:ESAROT>2.0.ZU;2-T
Abstract
The electronic structure and the surface reactivity of Co deposited on MoS2 (0001) has been investigated using angle-resolved photoemission spectroscop y. After depositing similar to1 NIL Co, the surface becomes metallic. The i nterface is nonreactive at room temperature. Besides the observation of an electronic band due to Co d electrons, the only significant modification of the surface electronic structure after Co deposition, is an overall shift of similar to0.7 eV due to the formation of a Schottky barrier. The interfa ce was annealed to increasingly higher temperatures. It remains unreactive up to 800 K. Above this temperature. the Co-induced intensity diminishes, a nd further changes are detected in the valence band, signaling partial reac tion with the substrate. (C) 2001 Elsevier Science B.V. All rights reserved .