Electronic structure of the mixed-valent system V2-xMoxO5

Citation
M. Demeter et al., Electronic structure of the mixed-valent system V2-xMoxO5, SURF SCI, 482, 2001, pp. 708-711
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
482
Year of publication
2001
Part
1
Pages
708 - 711
Database
ISI
SICI code
0039-6028(20010620)482:<708:ESOTMS>2.0.ZU;2-R
Abstract
We have investigated the electronic structure of the mixed-valent system V2 -xMoxO5 with varying doping concentration by means of X-ray photoelectron a nd X-ray emission spectroscopy. A series of V2-xMoxO5 compounds was obtaine d by the hydrochemical method. By comparing the XPS valence band with the V L alpha. O K alpha and Mo L beta (2.15) XES spectra we could localize the V 3d, Mo 4d and O 2p states in the valence band. It has been found that in the course of the Mo doping, the density of states just below the Fermi lev el increases. The enhancement is due to both Mo 4d and V 3d states and seem s to be relatively unaffected by the hybridization with O 2p states situate d at higher binding energies. The trends in the measured spectra are discus sed in comparison to band structure calculations performed for defect-conta ining supercells. (C) 2001 Elsevier Science B.V. All rights reserved.