Refinement of the crystal structure of digallium trisulfide, Ga2S3

Authors
Jones, CY Bryan, JC Kirschbaum, K Edwards, JG
Citation
Cy. Jones et al., Refinement of the crystal structure of digallium trisulfide, Ga2S3, Z KRIST-NEW, 216(3), 2001, pp. 327-328
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ZEITSCHRIFT FUR KRISTALLOGRAPHIE-NEW CRYSTAL STRUCTURES
ISSN journal
14337266 → ACNP
Volume
216
Issue
3
Year of publication
2001
Pages
327 - 328
Database
ISI
SICI code
1433-7266(2001)216:3<327:ROTCSO>2.0.ZU;2-6
Abstract
Ga2S3, monoclinic. C1c1 (No. 9). a = 11.107(2) Angstrom, b = 6.395(1) Angst rom, c = 7.021(1) Angstrom, beta = 121.17(3)degrees, V = 426.7 Angstrom (3) , Z = 4, R-gt(F) = 0.035, wR(ref)(F-2) = 0.084, T = 294 K.