The interface structure and interfacial defects in BaTiO3 films deposited b
y laser ablation on MgO (001) substrates were investigated by means of high
-resolution transmission electron microscopy. Two types of structure for th
e (001) interface, a TiO2 plane or a BaO plane of BaTiO3 facing a MgO plane
, were observed. The structure of TiO2/MgO was adopted by the main part of
the interface. The occurrence of the BaO/MgO structure was found to be rela
ted to the interfacial steps with a height of n - 1/2 (n = 1,2,3,...) unit
cells. The positions of the individual atomic species in the interfacial pl
anes were clarified by investigation of both [100] and [110] images combine
d with image simulation. Based on lattice images along the two directions,
the configuration and the Burgers vectors of interfacial dislocations were
determined. The coexistence of different types of interface structure and d
islocations was discussed on the basis of geometrical models of the interfa
ce structure and film growth. (C) 2001 Acta Materialia Inc. Published by El
sevier Science Ltd. All rights reserved.