Y. Zhao et al., High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure, APPL PHYS L, 79(8), 2001, pp. 1154-1156
Ti-doped MgB2 superconductors with different doping levels were prepared by
solid-state reaction at ambient pressure. The density, diamagnetic signal,
and J(c) of the samples change significantly with the doping level, with t
he best result achieved at x=0.1. At 5 K, the J(c) reaches 2x10(6) A/cm(2)
in the self-field and 5x10(4) A/cm(2) in 5 T. At 20 K, the J(c) is still as
high as 1.3x10(6) A/cm(2) in the self-field and 9.4x10(4) A/cm(2) in 2 T.
It is observed that partial melting occurs in the Ti-doped samples, resulti
ng in an excellent grain connection and extremely high density. In addition
, some fine particles (with sizes from 10 to 100 nm) of the second phases i
nduced by Ti doping are distributed in the MgB2 matrix, and this may play a
n important role in flux pinning enhancement. (C) 2001 American Institute o
f Physics.