Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits

Citation
At. Hanbicki et al., Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits, APPL PHYS L, 79(8), 2001, pp. 1190-1192
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
8
Year of publication
2001
Pages
1190 - 1192
Database
ISI
SICI code
0003-6951(20010820)79:8<1190:NRLEUH>2.0.ZU;2-V
Abstract
We have combined resonant interband tunneling diodes (RITDs) with giant mag netoresistance (GMR) elements so that the GMR element controls the switchin g current and stable operating voltage points of the hybrid circuit. Parall el and series combinations demonstrate continuous or two-state tunability o f the subsequent RITD-like current-voltage characteristic via the magnetic field response of the GMR element. Monostable-bistable transition logic ele ment operation is demonstrated with a GMR/RITD circuit in both the dc limit and clocked operation. The output of such hybrid circuits is nonvolatile, reprogrammable, and multivalued. (C) 2001 American Institute of Physics.