Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron -mobility transistors is reported. The shape of the EL spectra is completel y different from the shape of the photoluminescence spectrum. The wavelengt h for the peak of the EL spectrum gets shorter when the gate-bias voltage i s decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband t ransition of the channel electrons in the high-field region at the drain ed ge. (C) 2001 American Institute of Physics.