COMPUTER-SIMULATION OF P-N-JUNCTION DEVICES

Citation
Ns. Rebello et al., COMPUTER-SIMULATION OF P-N-JUNCTION DEVICES, American journal of physics, 65(8), 1997, pp. 765-773
Citations number
9
Categorie Soggetti
Physics
Journal title
ISSN journal
00029505
Volume
65
Issue
8
Year of publication
1997
Pages
765 - 773
Database
ISI
SICI code
0002-9505(1997)65:8<765:COPD>2.0.ZU;2-E
Abstract
We present here a computer program-the Semiconductor Device Simulator- which simulates the working of three p-n junction devices: the light-e mitting diode, the solar cell, and the tunnel diode. This program enab les students to create the device starting with two pieces of intrinsi c semiconductor material, and doping them appropriately to create a p- n junction device of their choice. While creating the device, students can observe the changes in the energy bands and Fermi level as a resp onse to doping. The device, once created, can then be incorporated int o a circuit where the students can observe the energy bands, the I-V g raph, as well as the intensity spectrum of the device in response to t he changes in applied voltage and/or incident light. No prior knowledg e of higher level mathematics is required to use the program. The prog ram is available for Windows(TM) and Macintosh(TM) platforms. The flex ibility of the program allows it to be used by students over a range o f academic levels. We have field tested the program along with associa ted materials in both high school and university environments. The cur rent version of the program contains modifications based on these fiel d tests. (C) 1997 American Association of Physics Teachers.