Characteristics of Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottkybarrier diodes

Authors
Rao, GV Chandra, GH Hussain, OM Uthanna, S Naidu, BS
Citation
Gv. Rao et al., Characteristics of Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottkybarrier diodes, CRYST RES T, 36(6), 2001, pp. 571-576
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
36
Issue
6
Year of publication
2001
Pages
571 - 576
Database
ISI
SICI code
0232-1300(2001)36:6<571:COAPTF>2.0.ZU;2-7
Abstract
Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottky barrier diodes have been prepared. The current-voltage, capacitance-voltage and photoresponse have been investigated. Various important physical parameters of these diod es were derived from these measurements.