Linewidth narrowing of a DFB semiconductor laser at 1.55 mu m by optical injection of an Er : ZBLAN microspherical laser

Citation
F. Lissillour et al., Linewidth narrowing of a DFB semiconductor laser at 1.55 mu m by optical injection of an Er : ZBLAN microspherical laser, EUROPH LETT, 55(4), 2001, pp. 499-504
Citations number
27
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
02955075 → ACNP
Volume
55
Issue
4
Year of publication
2001
Pages
499 - 504
Database
ISI
SICI code
0295-5075(200108)55:4<499:LNOADS>2.0.ZU;2-U
Abstract
An Er:ZBLAN microspherical laser has several laser lines around 1.55 mum wi th narrow bandwidths (similar to 50-100 kHz). Such a laser is used as a mas ter laser to optically inject a slave DFB semiconductor laser. We show that the slave can be easily locked by one microsphere mode only, enabling a sp ectral narrowing of the laser line ( from 30 MHz to 67 kHz). We stress the selective process of light amplification and filtering effect by the DFB sl ave.