Microwave transformers, inductors, and transmission lines implemented in an Si/SiGe HBT process

Experimental results are presented on microwave inductors, transformers, an d transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transi stor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 Omega, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 1 0 GHz are presented. Conventional planar inductors with inductances from 0. 5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers w ith a maximum available gain of better than -5 dB and a measured coupling c oefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed.