Improvement in oxide thickness uniformity by repeated spike oxidation

A new repeated spike oxidation (RSO) method used in a rapid thermal process ing system was proposed in this work. Simulation results predict the temper ature distribution on the wafer would be improved by this RSO method. We pr oposed that the improvement in wafer temperature uniformity is mainly cause d by self-compensation in radiation heat absorption rate. Experimental data pointed out that the new method can produce more uniform oxide thickness t han the conventional one under an intentionally created nonuniform heating environment.