Compensator control for chemical vapor deposition film growth using reduced-order design models

Citation
Gm. Kepler et al., Compensator control for chemical vapor deposition film growth using reduced-order design models, IEEE SEMIC, 14(3), 2001, pp. 231-241
Citations number
42
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
14
Issue
3
Year of publication
2001
Pages
231 - 241
Database
ISI
SICI code
0894-6507(200108)14:3<231:CCFCVD>2.0.ZU;2-T
Abstract
We present a summary of investigations on the use of proper orthogonal deco mposition techniques as a reduced basis method for computation of feedback controls and compensators in a high-pressure chemical vapor deposition (HPC VD) reactor. These investigations incorporate multiple species and controls , gas phase reactions, and time dependent tracking signals that are consist ent with pulsed vapor reactant inputs. Numerical implementation of the mode l-based feedback control uses a reduced-order state estimator, based on par tial state observations of the fluxes of reactants at the substrate center, which can be achieved with current sensing technology. We demonstrate that the reduce-order state estimator or compensator system is capable of subst antial control authority when applied to the full system.