DC thermal modelling of GaAs MESFETs based on a semiempirical approach

In this paper a new semiempirical large signal thermal model of GaAs MESFET s is proposed for DC characterization. The model includes a third order dep endence of fitting parameters on bias conditions and three thermal fitting parameters. A number of GaAs MESFETs, each very different from a geometrica l and technological point of view, have been characterized as a function of temperature and modelled with high accuracy. The CPU extraction time resul ts are moderate in any example. Results have been compared with the Rodrigu ez-Tellez model, showing improvements in accuracy of better than 30%. The m odel can be successfully used in MMIC CAD applications.