Ionization of an exciton moving perpendicular to a magnetic field in the GaAs/AlxGa1-xAs superlattice

Citation
Bp. Zakharchenya et Vf. Sapega, Ionization of an exciton moving perpendicular to a magnetic field in the GaAs/AlxGa1-xAs superlattice, JETP LETTER, 74(1), 2001, pp. 32-35
Citations number
15
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
74
Issue
1
Year of publication
2001
Pages
32 - 35
Database
ISI
SICI code
0021-3640(2001)74:1<32:IOAEMP>2.0.ZU;2-B
Abstract
The magnetic field effect on the spectrum of excitons associated with vario us minibands in superlattices was studied by resonance Raman spectroscopy. It was found that the intensity of Raman scattering by acoustic phonons wit h the participation of the ground state of an exciton associated with the s econd miniband is sharply reduced even in weak magnetic fields if its veloc ity vector is orthogonal to the external magnetic field. This phenomenon wa s explained by the ionization of the exciton in the electric filed arising in the system of coordinate associated with the exciton moving perpendicula r to the external magnetic field. (C) 2001 MAIK "Nauka/Interperiodica".