Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy

Citation
Ee. Vdovin et al., Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy, JETP LETTER, 74(1), 2001, pp. 41-45
Citations number
21
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
74
Issue
1
Year of publication
2001
Pages
41 - 45
Database
ISI
SICI code
0021-3640(2001)74:1<41:AOEWFI>2.0.ZU;2-O
Abstract
We present an experimental study of electron wave functions in InAs/GaAs se lf-assembled quantum dots by magnetotunneling spectroscopy. The electronic wave functions have a biaxial symmetry in the growth plane, with axes corre sponding to the main crystallographic directions in the growth plane. Moreo ver, we observed the in-plane anisotropy of the subbands of the quantum wel l. (C) 2001 MAIK "Nauka/Interperiodica".