Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing

Excimer laser annealing has been investigated to form a shallow junction on p-like CdTe crystals by indium diffusion. By evaporating a thin layer of i ndium on the CdTe crystals in a physical vapor deposition system without he ating the crystals, and then irradiating them with an excimer laser, we cou ld produce a highly conductive thin surface layer on the crystal. These lay ers showed n-type conductivity in Hall measurements, and an increase on the donor-acceptor pair band, possibly due to indium incorporation, was also o bserved in the photoluminescent spectrum. The best value of resistivity, ca rrier concentration and electron mobility of the layer thus obtained was 5 X 10(-3) Ohm cm, 9 X 10(18) cm(-3), and 138 cm(2)/Vs, respectively. The car rier transport properties of the shallow p-n junction formed were then inve stigated by means of current-voltage measurements at different temperatures . Furthermore, applicability of this junction in a gamma-ray detector was a lso investigated.