Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe

Authors
Barrios, CA Messmer, ER Holmgren, M Risberg, A Halonen, J Lourdudoss, S
Citation
Ca. Barrios et al., Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP : Fe and GaAs : Fe, J ELEC MAT, 30(8), 2001, pp. 987-991
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
30
Issue
8
Year of publication
2001
Pages
987 - 991
Database
ISI
SICI code
0361-5235(200108)30:8<987:ERGLMW>2.0.ZU;2-8
Abstract
Selective regrowth of semi-insulating iron-doped Ga0.51In0.49P (SI-GaInP:Fe ) and SI-GaAs:Fe around GaAs/AlGaAs mesas by hydride vapor phase epitaxy (H VPE) has been achieved. A HCl based in-situ cleaning procedure has been use d to remove aluminum oxide from the etched walls of the mesas. Regrowth con ducted without proper cleaning results in an irregular interface with voids . Regrowth morphology aspects are also presented. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers.