S. Tsukimoto et al., In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al, J MICROSC O, 203, 2001, pp. 17-21
Electron energy loss spectroscopy was used to observe the segregation of Al
on a Si surface above the melting point of Al. A mixture of Al and Si part
icles was heated above the melting point of Al in a vacuum of 1 x 10(-5) Pa
. The Si surface, which initially had been covered with an amorphous oxide
layer before heating. became clean and atomically facetted when the Al melt
ed. It was shown that the Si surface was segregated with Al.