In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al

Citation
S. Tsukimoto et al., In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al, J MICROSC O, 203, 2001, pp. 17-21
Citations number
3
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF MICROSCOPY-OXFORD
ISSN journal
00222720 → ACNP
Volume
203
Year of publication
2001
Part
1
Pages
17 - 21
Database
ISI
SICI code
0022-2720(200107)203:<17:ISHREM>2.0.ZU;2-J
Abstract
Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si part icles was heated above the melting point of Al in a vacuum of 1 x 10(-5) Pa . The Si surface, which initially had been covered with an amorphous oxide layer before heating. became clean and atomically facetted when the Al melt ed. It was shown that the Si surface was segregated with Al.