Dislocation mobility and electronic effects in semiconductor compounds

Authors
Vanderschaeve, G Levade, C Caillard, D
Citation
G. Vanderschaeve et al., Dislocation mobility and electronic effects in semiconductor compounds, J MICROSC O, 203, 2001, pp. 72-83
Citations number
43
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF MICROSCOPY-OXFORD
ISSN journal
00222720 → ACNP
Volume
203
Year of publication
2001
Part
1
Pages
72 - 83
Database
ISI
SICI code
0022-2720(200107)203:<72:DMAEEI>2.0.ZU;2-D
Abstract
In situ transmission electron microscopy experiments provide a unique way t o investigate in real time the dislocation behaviour at a microscopic scale and to decide which elementary process controls the dislocation glide in s emiconductors. In this review the experimental results obtained on differen t semiconductors are presented and discussed. Particular attention is devot ed to the radiation-enhanced glide process.