Fabrication of LaAlO3/Pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 multilayers by metallorganic chemical vapor deposition

Multilayer structures LaAlO3/Pt(100) and CeO2(100)/Pt(100) have been grown on Hastelloy C276 by metallorganic chemical vapor deposition. The volatile beta -diketonate Pt(acac)(2) precursor has been used to grow Pt films at 28 0 degreesC. They are (100) oriented with very smooth and homogeneous surfac es. The second-generation lanthanum and cerium precursors (M(hfa)(3). digly me) [M = La(III), Ce(III)] have been successfully used for growing LaAlO3 a nd CeO2 layers on Pt(100). A two-step route has been used for LaAlO3 since there is evidence of severe interdiffusion adopting a one-step, higher temp erature approach. [100] oriented CeO2 films can be easily deposited on Pt(1 00) at 450 degreesC. (C) 2001 The Electrochemical Society.