Ferroelectric materials with Bi-layered structure such as SrBi2Ta2O9 (SBT)
and SrBi2Nb2O9 (SBN) are now intensively investigated in view of their appl
ications in non-volatile computer memories and high-temperature piezoelectr
ic transducers. When Sr is substituted with Ba, significant disorder is ind
uced and material exhibits broadening of the phase transition. In this work
, BaBi2Ta2O9 (BBT) and Ba2Bi2Nb2O9 (BBN) ceramics were sintered using mixed
oxide route. Dielectric properties were investigated in the temperature ra
nge 20-600 degreesC at frequencies 25 Hz to 1 MHz. Strong dispersion of the
dielectric permittivity is found indicating relaxor nature of the phase tr
ansition. It is shown that the dielectric relaxation in BBN ceramics is dif
ferent from that of conventional relaxors such as PbMg1/3Nb2/3O3 (PMN). Fit
ting with Vogel-Fulcher relationship is used to evaluate parameters of the
dielectric relaxation such as freezing temperature and attempt frequency. (
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