Electrical properties of donor- and acceptor-doped BaBi4Ti4O15

The electrical properties of the BaBi4Ti4O15 Compound, a member of the fami ly of Aurivillius bismuth-based layer-structure perovskites, have been stud ied as a function of aliovalent doping and processing conditions. The sampl es were prepared by reaction sintering or hot forging of a mixture of BaTiO 3 and Bi4Ti3O12 with Nb substituted for Ti, as a donor dopant, and Fe as an acceptor. The dielectric constant of BaBi4Ti4O15 is increased by both dopa nts. Nb doping decreases the Curie temperature, while Fe doping increases i t. The conductivity of BaBi4Ti4O15 is p-type and it is decreased by Nb dopi ng and increased by Fe doping. The incorporation of aliovalent dopants into the BaBi4Ti4O15 structure, is however, preferentially compensated by the c hange in the composition of the compound. (C) 2001 Elsevier Science Ltd. Al l rights reserved.